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ROHM Semiconductor RQ3E120GNTB
MOSFET N-CH 30V 12A 8-HSMT
- Manufacturer
- ROHM Semiconductor
- Datasheet
- Price
- 0
- Stock
- 5672
Product Details
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 30V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 840pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 9A (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 6-UDFN Exposed Pad
- Vgs(th) (Max) @ Id
- 2V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 14.5mOhm @ 9A, 10V
- Series
- -
- Power Dissipation (Max)
- 1.7W (Ta), 12.5W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- DFN2020MD-6
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 20.6nC @ 10V