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ROHM Semiconductor RQ3E100MNTB1
MOSFET N-CH 30V 10A HSMT8
- Manufacturer
- ROHM Semiconductor
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- FET Type
- N-Channel
- Supplier Device Package
- SOT-23F
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 3.6nC @ 4.5V
- Vgs (Max)
- ±8V
- Drain to Source Voltage (Vdss)
- 20V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 410pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 4A (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 1.5V, 4.5V
- Mounting Type
- Surface Mount
- Package / Case
- SOT-23-3 Flat Leads
- Vgs(th) (Max) @ Id
- 1V @ 1mA
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 33mOhm @ 4A, 4.5V
- Series
- U-MOSVI
- Power Dissipation (Max)
- 1W (Ta)