ROHM Semiconductor RQ3E100BNTB

Product Details

Rds On (Max) @ Id, Vgs

190mOhm @ 1.6A, 4.5V

Series

-

Power Dissipation (Max)

320mW (Ta)

FET Type

N-Channel

Supplier Device Package

TUMT3

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

2.3nC @ 4.5V

Vgs (Max)

±12V

Drain to Source Voltage (Vdss)

45V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

150pF @ 10V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

1.6A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Mounting Type

Surface Mount

Package / Case

3-SMD, Flat Leads

Vgs(th) (Max) @ Id

1.5V @ 1mA

Operating Temperature

150°C (TJ)