ROHM Semiconductor RQ3C150BCTB

Product Details

Rds On (Max) @ Id, Vgs

10mOhm @ 13.5A, 10V

Series

-

Power Dissipation (Max)

2.08W (Ta), 19.2W (Tc)

FET Type

N-Channel

Supplier Device Package

PowerDI3333-8

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

33.5nC @ 10V

Vgs (Max)

±16V

Drain to Source Voltage (Vdss)

60V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1925pF @ 30V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

11A (Ta), 34A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Package / Case

8-PowerVDFN

Vgs(th) (Max) @ Id

2V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)