ROHM Semiconductor RQ1E100XNTR

Product Details

Operating Temperature

-55°C ~ 155°C (TJ)

Rds On (Max) @ Id, Vgs

15mOhm @ 20A, 10V

Series

-

Power Dissipation (Max)

1W (Ta)

FET Type

N-Channel

Supplier Device Package

V-DFN3333-8

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

33.3nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

100V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1871pF @ 50V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

9.4A (Ta), 34A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Package / Case

8-VDFN Exposed Pad

Vgs(th) (Max) @ Id

3.5V @ 250µA