ROHM Semiconductor RP1E090RPTR

Product Details

FET Type

P-Channel

Supplier Device Package

8-SOIC

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

4.2nC @ 4.5V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

30V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

360pF @ 10V

FET Feature

Schottky Diode (Isolated)

Current - Continuous Drain (Id) @ 25°C

2.3A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Vgs(th) (Max) @ Id

3V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

95mOhm @ 3A, 10V

Series

-

Power Dissipation (Max)

770mW (Ta)