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ROHM Semiconductor RJ1L08CGNTLL
RJ1G08CGN IS A POWER MOSFET WITH
- Manufacturer
- ROHM Semiconductor
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- SOT-1023, 4-LFPAK
- Vgs(th) (Max) @ Id
- 2V @ 180µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 1.2mOhm @ 50A, 10V
- Series
- -
- Power Dissipation (Max)
- 3.9W (Ta), 134W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- LFPAK4 (5x6)
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 109nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 40V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 6330pF @ 20V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 44A (Ta), 258A (Tc)