Images are for reference only. See Product Specifications for product details
ROHM Semiconductor RJ1G12BGNTLL
RJ1G12BGN IS A POWER MOSFET WITH
- Manufacturer
- ROHM Semiconductor
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Series
- STripFET™ III
- Rds On (Max) @ Id, Vgs
- 1.2mOhm @ 80A, 10V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 300W (Tc)
- Packaging
- Digi-Reel®
- Supplier Device Package
- H²PAK
- Vgs (Max)
- ±20V
- Gate Charge (Qg) (Max) @ Vgs
- 109nC @ 10V
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 24V
- FET Feature
- -
- Input Capacitance (Ciss) (Max) @ Vds
- 7050pF @ 15V
- Part Status
- Discontinued at Digi-Key
- Current - Continuous Drain (Id) @ 25°C
- 180A (Tc)
- Mounting Type
- Surface Mount
- Drive Voltage (Max Rds On, Min Rds On)
- 5V, 10V
- Package / Case
- TO-263-7, D²Pak (6 Leads + Tab)
- Base Part Number
- STH300
- Vgs(th) (Max) @ Id
- 1V @ 250µA