ROHM Semiconductor RF6E065BNTCR

Product Details

Package / Case

TO-261-3

Vgs(th) (Max) @ Id

3.5V @ 40µA

Operating Temperature

-40°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

1.2Ohm @ 900mA, 10V

Series

CoolMOS™ P7

Power Dissipation (Max)

6.3W (Tc)

FET Type

N-Channel

Supplier Device Package

PG-SOT223

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

4.8nC @ 10V

Vgs (Max)

±16V

Drain to Source Voltage (Vdss)

700V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

174pF @ 400V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

4.5A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Surface Mount