ROHM Semiconductor RF6E045AJTCR

Product Details

Package / Case

8-PowerTDFN

Vgs(th) (Max) @ Id

2.1V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

5.8mOhm @ 30A, 10V

Series

-

Power Dissipation (Max)

760mW (Ta), 25.5W (Tc)

FET Type

N-Channel

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

10.9nC @ 4.5V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

30V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1252pF @ 15V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

9A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount