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ROHM Semiconductor RDD050N20TL
MOSFET N-CH 200V 5A CPT3
- Manufacturer
- ROHM Semiconductor
- Datasheet
- Price
- 0
- Stock
- 4368
Product Details
- Package / Case
- 8-PowerTDFN
- Vgs(th) (Max) @ Id
- 3V @ 250µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 8mOhm @ 65A, 10V
- Series
- Automotive, AEC-Q101, PowerTrench®
- Power Dissipation (Max)
- 107W (Tj)
- FET Type
- P-Channel
- Supplier Device Package
- 8-DFN (5.1x6.3)
- Packaging
- Cut Tape (CT)
- Gate Charge (Qg) (Max) @ Vgs
- 67nC @ 10V
- Vgs (Max)
- ±16V
- Drain to Source Voltage (Vdss)
- 40V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 3360pF @ 20V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 65A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount