ROHM Semiconductor RDD022N60TL

Product Details

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

56A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Mounting Type

Through Hole

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

Vgs(th) (Max) @ Id

3.7V @ 100µA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

11.2mOhm @ 35A, 10V

Series

HEXFET®, StrongIRFET™

Power Dissipation (Max)

99W (Tc)

FET Type

N-Channel

Supplier Device Package

IPAK (TO-251)

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

89nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

75V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

3107pF @ 25V