Images are for reference only. See Product Specifications for product details
ROHM Semiconductor RDD020N60TL
MOSFET N-CH 600V 2A CPT3
- Manufacturer
- ROHM Semiconductor
- Datasheet
- Price
- 0.55
- Stock
- 0
Product Details
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 11.5A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-251-3 Stub Leads, IPak
- Vgs(th) (Max) @ Id
- 4.5V @ 250µA
- Operating Temperature
- -50°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 420mOhm @ 6A, 10V
- Series
- -
- Power Dissipation (Max)
- 150W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-251A
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 16nC @ 10V
- Vgs (Max)
- ±30V
- Drain to Source Voltage (Vdss)
- 300V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 790pF @ 25V