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ROHM Semiconductor RD3P08BBDTL
RD3P08BBD IS A POWER MOSFET WITH
- Manufacturer
- ROHM Semiconductor
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Base Part Number
- STB20N
- Vgs(th) (Max) @ Id
- 4.75V @ 250µA
- Operating Temperature
- 150°C (TJ)
- Series
- MDmesh™ M2-EP
- Rds On (Max) @ Id, Vgs
- -
- FET Type
- N-Channel
- Power Dissipation (Max)
- -
- Packaging
- Tape & Reel (TR)
- Supplier Device Package
- D2PAK
- Vgs (Max)
- -
- Gate Charge (Qg) (Max) @ Vgs
- 22nC @ 10V
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 600V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 13A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB