ROHM Semiconductor RD3L080SNTL1

Product Details

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

65pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

1.7A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs(th) (Max) @ Id

4V @ 1mA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

3.4Ohm @ 500mA, 10V

Series

-

Power Dissipation (Max)

26W (Tc)

FET Type

N-Channel

Supplier Device Package

TO-252

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

6.5nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

600V