ROHM Semiconductor RD3H160SPTL1

Product Details

FET Type

N-Channel

Supplier Device Package

DPAK+

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

10nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

40V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

610pF @ 10V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

15A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs(th) (Max) @ Id

2.5V @ 100µA

Operating Temperature

175°C (TJ)

Rds On (Max) @ Id, Vgs

17.8mOhm @ 7.5A, 10V

Series

U-MOSVIII-H

Power Dissipation (Max)

46W (Tc)