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ROHM Semiconductor RCX200N20
MOSFET N-CH 200V 20A TO220
- Manufacturer
- ROHM Semiconductor
- Datasheet
- Price
- 1.35
- Stock
- 205
Product Details
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 800V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 570pF @ 100V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 3.9A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3 Full Pack
- Vgs(th) (Max) @ Id
- 3.9V @ 240µA
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 1.4Ohm @ 2.3A, 10V
- Series
- CoolMOS™
- Power Dissipation (Max)
- 31W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- PG-TO220 Full Pack
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 23nC @ 10V