ROHM Semiconductor RCX051N25

Product Details

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

650V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

790pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

7.3A (Tc)

Part Status

Not For New Designs

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id

3.9V @ 350µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

600mOhm @ 4.6A, 10V

Series

CoolMOS™

Power Dissipation (Max)

83W (Tc)

FET Type

N-Channel

Supplier Device Package

PG-TO263-3-2

Packaging

Cut Tape (CT)

Gate Charge (Qg) (Max) @ Vgs

27nC @ 10V