Images are for reference only. See Product Specifications for product details
ROHM Semiconductor R8008ANX
MOSFET N-CH 800V 8A TO-220FM
- Manufacturer
- ROHM Semiconductor
- Datasheet
- Price
- 4.37
- Stock
- 986
Product Details
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 600V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1952pF @ 400V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 31A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3 Full Pack
- Vgs(th) (Max) @ Id
- 4V @ 530µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 99mOhm @ 10.5A, 10V
- Series
- CoolMOS™ P7
- Power Dissipation (Max)
- 29W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- PG-TO220 Full Pack
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 45nC @ 10V