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ROHM Semiconductor R6504KNJTL
NCH 650V 4A POWER MOSFET. R6504
- Manufacturer
- ROHM Semiconductor
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Series
- aMOS™
- Supplier Device Package
- TO-251A
- FET Type
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 8nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 700V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 354pF @ 100V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 3.8A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-251-3 Stub Leads, IPak
- Vgs(th) (Max) @ Id
- 4.1V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 1.4Ohm @ 1A, 10V
- Power Dissipation (Max)
- 48W (Tc)