ROHM Semiconductor R6076MNZ1C9

Product Details

FET Type

N-Channel

Power Dissipation (Max)

190W (Tc)

Packaging

Tube

Supplier Device Package

TO-247

Vgs (Max)

±25V

Gate Charge (Qg) (Max) @ Vgs

62.5nC @ 10V

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

FET Feature

-

Input Capacitance (Ciss) (Max) @ Vds

2700pF @ 100V

Part Status

Active

Current - Continuous Drain (Id) @ 25°C

28A (Tc)

Mounting Type

Through Hole

Drive Voltage (Max Rds On, Min Rds On)

10V

Package / Case

TO-247-3

Base Part Number

STW34N

Vgs(th) (Max) @ Id

5V @ 250µA

Operating Temperature

150°C (TJ)

Series

MDmesh™ V

Rds On (Max) @ Id, Vgs

110mOhm @ 14A, 10V