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ROHM Semiconductor R6035KNZC8

MOSFET N-CHANNEL 600V 35A TO3PF

Manufacturer
ROHM Semiconductor
Datasheet
Price
10.47
Stock
360

Product Details

Packaging
Tube
Gate Charge (Qg) (Max) @ Vgs
135nC @ 10V
Vgs (Max)
±30V
Drain to Source Voltage (Vdss)
600V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
4100pF @ 300V
FET Feature
Super Junction
Current - Continuous Drain (Id) @ 25°C
38.8A (Ta)
Part Status
Active
Drive Voltage (Max Rds On, Min Rds On)
10V
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Vgs(th) (Max) @ Id
3.7V @ 1.9mA
Operating Temperature
150°C (TJ)
Rds On (Max) @ Id, Vgs
65mOhm @ 19.4A, 10V
Series
DTMOSIV
Power Dissipation (Max)
270W (Tc)
FET Type
N-Channel
Supplier Device Package
TO-3P(N)