ROHM Semiconductor R6030KNXC7

Product Details

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

FET Feature

-

Input Capacitance (Ciss) (Max) @ Vds

5500pF @ 25V

Part Status

Active

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Mounting Type

Through Hole

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Package / Case

TO-220-3

Base Part Number

STP80N

Vgs(th) (Max) @ Id

2.5V @ 250µA

Operating Temperature

175°C (TJ)

Series

STripFET™ II

Rds On (Max) @ Id, Vgs

4.5mOhm @ 40A, 10V

FET Type

N-Channel

Power Dissipation (Max)

300W (Tc)

Packaging

Tube

Supplier Device Package

TO-220AB

Vgs (Max)

±20V

Gate Charge (Qg) (Max) @ Vgs

110nC @ 4.5V