ROHM Semiconductor R6030ENZ4C13

Product Details

FET Type

N-Channel

Power Dissipation (Max)

35W (Tc)

Packaging

Tube

Supplier Device Package

TO-220FP

Vgs (Max)

±25V

Gate Charge (Qg) (Max) @ Vgs

71nC @ 10V

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

FET Feature

-

Input Capacitance (Ciss) (Max) @ Vds

3000pF @ 100V

Part Status

Active

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Mounting Type

Through Hole

Drive Voltage (Max Rds On, Min Rds On)

10V

Package / Case

TO-220-3 Full Pack

Base Part Number

STF38N

Vgs(th) (Max) @ Id

5V @ 250µA

Operating Temperature

150°C (TJ)

Series

MDmesh™ V

Rds On (Max) @ Id, Vgs

95mOhm @ 15A, 10V