ROHM Semiconductor R6024KNZ1C9

Product Details

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

4.4Ohm @ 1.3A, 10V

Series

-

Power Dissipation (Max)

3.1W (Ta), 50W (Tc)

FET Type

N-Channel

Supplier Device Package

D2PAK

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

18nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

600V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

350pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

2.2A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id

4V @ 250µA