ROHM Semiconductor R6020KNZ1C9

Product Details

Vgs(th) (Max) @ Id

4V @ 250µA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

8mOhm @ 75A, 10V

Series

UltraFET™

Power Dissipation (Max)

285W (Tc)

FET Type

N-Channel

Supplier Device Package

TO-220-3

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

210nC @ 20V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

55V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

3200pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Package / Case

TO-220-3