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ROHM Semiconductor R6018ANJTL

MOSFET N-CH 10V DRIVE LPTS

Manufacturer
ROHM Semiconductor
Datasheet
Price
2.9
Stock
0

Product Details

Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
1100pF @ 100V
FET Feature
Super Junction
Current - Continuous Drain (Id) @ 25°C
13A (Tc)
Part Status
Active
Drive Voltage (Max Rds On, Min Rds On)
10V
Mounting Type
Through Hole
Package / Case
TO-220-3
Vgs(th) (Max) @ Id
3.5V @ 440µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
300mOhm @ 6.6A, 10V
Series
CoolMOS™
Power Dissipation (Max)
-
FET Type
N-Channel
Supplier Device Package
TO-220AB
Packaging
Tube
Gate Charge (Qg) (Max) @ Vgs
30nC @ 10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
600V