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ROHM Semiconductor R6009KNX
MOSFET N-CH 600V 9A TO220FM
- Manufacturer
- ROHM Semiconductor
- Datasheet
- Price
- 1.65
- Stock
- 458
Product Details
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 12.6nC @ 10V
- Vgs (Max)
- ±30V
- Drain to Source Voltage (Vdss)
- 700V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 743pF @ 100V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 8A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 600mOhm @ 4A, 10V
- Series
- -
- Power Dissipation (Max)
- 83W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-251 (IPAK)