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ROHM Semiconductor R6009JNJGTL
R6009JNJ IS A POWER MOSFET WITH
- Manufacturer
- ROHM Semiconductor
- Datasheet
- Price
- 0
- Stock
- 100
Product Details
- Part Status
- Active
- Current - Continuous Drain (Id) @ 25°C
- 2.2A (Tc)
- Mounting Type
- Through Hole
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Base Part Number
- STU2N
- Vgs(th) (Max) @ Id
- 4.5V @ 50µA
- Operating Temperature
- 150°C (TJ)
- Series
- SuperMESH3™
- Rds On (Max) @ Id, Vgs
- 3.6Ohm @ 1.1A, 10V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 45W (Tc)
- Packaging
- Tube
- Supplier Device Package
- I-PAK
- Vgs (Max)
- ±30V
- Gate Charge (Qg) (Max) @ Vgs
- 15nC @ 10V
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 620V
- FET Feature
- -
- Input Capacitance (Ciss) (Max) @ Vds
- 340pF @ 50V