ROHM Semiconductor R6008ANX

Product Details

FET Type

N-Channel

Power Dissipation (Max)

170W (Tc)

Packaging

Digi-Reel®

Supplier Device Package

D2PAK

Vgs (Max)

±25V

Gate Charge (Qg) (Max) @ Vgs

35nC @ 10V

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

FET Feature

-

Input Capacitance (Ciss) (Max) @ Vds

1440pF @ 100V

Part Status

Active

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Mounting Type

Surface Mount

Drive Voltage (Max Rds On, Min Rds On)

10V

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Base Part Number

STB28N

Vgs(th) (Max) @ Id

4V @ 250µA

Operating Temperature

150°C (TJ)

Series

MDmesh™ M2

Rds On (Max) @ Id, Vgs

180mOhm @ 10A, 10V