Images are for reference only. See Product Specifications for product details
ROHM Semiconductor R6004JND3TL1
MOSFET LOW ON-RESISTANCE AND FAS
- Manufacturer
- ROHM Semiconductor
- Datasheet
- Price
- 1.59
- Stock
- 2562
Product Details
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 950mOhm @ 2.8A, 10V
- Series
- CoolMOS™
- Power Dissipation (Max)
- 50W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- PG-TO252-3
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 25nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 600V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 490pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 4.5A (Tc)
- Part Status
- Not For New Designs
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs(th) (Max) @ Id
- 3.9V @ 200µA