ROHM Semiconductor R6004ENX

Product Details

Vgs(th) (Max) @ Id

4.5V @ 25µA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

30mOhm @ 22A, 10V

Series

TrenchMV™

Power Dissipation (Max)

130W (Tc)

FET Type

N-Channel

Supplier Device Package

TO-220AB

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

33nC @ 10V

Vgs (Max)

±30V

Drain to Source Voltage (Vdss)

100V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1262pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

44A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Package / Case

TO-220-3