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ROHM Semiconductor R6003KND3TL1
MOSFET LOW ON-RESISTANCE AND FAS
- Manufacturer
- ROHM Semiconductor
- Datasheet
- Price
- 0
- Stock
- 2490
Product Details
- Vgs(th) (Max) @ Id
- 4V @ 1mA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 8.5mOhm @ 25A, 10V
- Series
- -
- Power Dissipation (Max)
- 263W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- I2PAK
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 111nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 100V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 5512pF @ 50V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 100A (Tj)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-262-3 Long Leads, I²Pak, TO-262AA