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ROHM Semiconductor R6002END3TL1
NCH 600V 2A POWER MOSFET
- Manufacturer
- ROHM Semiconductor
- Datasheet
- Price
- 0
- Stock
- 1784
Product Details
- Rds On (Max) @ Id, Vgs
- 225mOhm @ 3A, 10V
- Series
- -
- Power Dissipation (Max)
- 1W (Ta), 19W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- DPAK/TP-FA
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 9.8nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 100V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 490pF @ 20V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 9A (Ta)
- Part Status
- Not For New Designs
- Drive Voltage (Max Rds On, Min Rds On)
- 4V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs(th) (Max) @ Id
- 2.6V @ 1mA
- Operating Temperature
- 150°C (TJ)