ROHM Semiconductor R5007ANX

Product Details

FET Type

N-Channel

Supplier Device Package

D-Pak

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

12nC @ 5V

Vgs (Max)

±10V

Drain to Source Voltage (Vdss)

100V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

490pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

7.7A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4V, 5V

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs(th) (Max) @ Id

2V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

270mOhm @ 4.6A, 5V

Series

-

Power Dissipation (Max)

2.5W (Ta), 42W (Tc)