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ROHM Semiconductor EMB11T2R
TRANS 2PNP PREBIAS 0.15W EMT6
- Manufacturer
- ROHM Semiconductor
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Part Status
- Active
- Current - Collector Cutoff (Max)
- 500nA (ICBO)
- Power - Max
- 150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 100 @ 1mA, 5V
- Mounting Type
- Surface Mount
- Voltage - Collector Emitter Breakdown (Max)
- 50V
- Package / Case
- SOT-563, SOT-666
- Transistor Type
- 2 NPN - Pre-Biased (Dual)
- Base Part Number
- *MH4
- Resistor - Base (R1)
- 10kOhms
- Frequency - Transition
- 250MHz
- Supplier Device Package
- EMT6
- Resistor - Emitter Base (R2)
- -
- Series
- -
- Vce Saturation (Max) @ Ib, Ic
- 300mV @ 1mA, 10mA
- Packaging
- Tape & Reel (TR)
- Current - Collector (Ic) (Max)
- 100mA