ROHM Semiconductor BSM180C12P2E202

Product Details

Vgs (Max)

±12V

Drain to Source Voltage (Vdss)

20V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

600pF @ 10V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

11A (Tc)

Part Status

Obsolete

Drive Voltage (Max Rds On, Min Rds On)

1.7V, 4.5V

Mounting Type

Surface Mount

Package / Case

6-UFBGA

Vgs(th) (Max) @ Id

1.2V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

75mOhm @ 1A, 4.5V

Series

TrenchFET®

Power Dissipation (Max)

2.77W (Ta), 13W (Tc)

FET Type

P-Channel

Supplier Device Package

6-Micro Foot™ (1.5x1)

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

25nC @ 10V