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ROHM Semiconductor 2SK3050TL

MOSFET N-CH 600V 2A DPAK

Manufacturer
ROHM Semiconductor
Datasheet
Price
0
Stock
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Product Details

Series
SuperMESH™
Rds On (Max) @ Id, Vgs
260mOhm @ 14A, 10V
FET Type
N-Channel
Power Dissipation (Max)
450W (Tc)
Packaging
Tube
Supplier Device Package
MAX247™
Vgs (Max)
±30V
Gate Charge (Qg) (Max) @ Vgs
490nC @ 10V
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
900V
FET Feature
-
Input Capacitance (Ciss) (Max) @ Vds
12000pF @ 25V
Part Status
Obsolete
Current - Continuous Drain (Id) @ 25°C
26A (Tc)
Mounting Type
Through Hole
Drive Voltage (Max Rds On, Min Rds On)
10V
Package / Case
TO-247-3
Base Part Number
STY30N
Vgs(th) (Max) @ Id
4.5V @ 150µA
Operating Temperature
-65°C ~ 150°C (TJ)