Renesas Electronics America NP90N06VLG-E1-AY

Product Details

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

6000pF @ 10V

FET Feature

Schottky Diode (Body)

Current - Continuous Drain (Id) @ 25°C

60A (Ta)

Part Status

Obsolete

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Package / Case

SC-100, SOT-669

Vgs(th) (Max) @ Id

-

Operating Temperature

150°C (TJ)

Rds On (Max) @ Id, Vgs

2.2mOhm @ 30A, 10V

Series

-

Power Dissipation (Max)

65W (Tc)

FET Type

N-Channel

Supplier Device Package

LFPAK

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

42nC @ 4.5V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

30V