Images are for reference only. See Product Specifications for product details
Powerex, Inc. QJD1210010
MOSFET 2N-CH 1200V 100A SIC
- Manufacturer
- Powerex, Inc.
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Supplier Device Package
- Module
- Series
- -
- Gate Charge (Qg) (Max) @ Vgs
- 500nC @ 20V
- FET Type
- 2 N-Channel (Dual)
- Drain to Source Voltage (Vdss)
- 1200V (1.2kV)
- Packaging
- Bulk
- Input Capacitance (Ciss) (Max) @ Vds
- 10200pF @ 800V
- FET Feature
- Silicon Carbide (SiC)
- Current - Continuous Drain (Id) @ 25°C
- 100A (Tc)
- Part Status
- Active
- Power - Max
- 900W
- Mounting Type
- Chassis Mount
- Package / Case
- Module
- Vgs(th) (Max) @ Id
- 5V @ 10mA
- Operating Temperature
- -40°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 25mOhm @ 100A, 20V