ON Semiconductor WPB4002-1E

Product Details

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

76nC @ 10V

Vgs (Max)

±25V

Drain to Source Voltage (Vdss)

30V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

3400pF @ 15V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

-

Part Status

Obsolete

Drive Voltage (Max Rds On, Min Rds On)

6V, 20V

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Vgs(th) (Max) @ Id

2.6V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

6.2mOhm @ 15A, 20V

Series

-

Power Dissipation (Max)

3.1W (Ta)

FET Type

P-Channel

Supplier Device Package

8-SOIC