ON Semiconductor SSU1N60BTU-WS

Product Details

Package / Case

8-PowerTDFN

Vgs(th) (Max) @ Id

2.35V @ 25µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

16mOhm @ 17A, 10V

Series

HEXFET®

Power Dissipation (Max)

2.6W (Ta), 20W (Tc)

FET Type

N-Channel

Supplier Device Package

8-PQFN (3.3x3.3), Power33

Packaging

Cut Tape (CT)

Gate Charge (Qg) (Max) @ Vgs

7.5nC @ 4.5V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

30V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

560pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

10A (Ta)

Part Status

Discontinued at Digi-Key

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount