ON Semiconductor NVMYS5D3N04CTWG

Product Details

Vgs(th) (Max) @ Id

2.2V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

1.23mOhm @ 15A, 10V

Series

TrenchFET® Gen IV

Power Dissipation (Max)

5W (Ta), 65.7W (Tc)

FET Type

N-Channel

Supplier Device Package

PowerPAK® 1212-8S (3.3x3.3)

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

82nC @ 10V

Vgs (Max)

+20V, -16V

Drain to Source Voltage (Vdss)

25V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

3670pF @ 12.5V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

53.9A (Ta), 195.5A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Package / Case

PowerPAK® 1212-8S