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ON Semiconductor NVMJS1D0N04CTWG
TRENCH 6 40V SL NFET
- Manufacturer
- ON Semiconductor
- Datasheet
- Price
- 1.1
- Stock
- 0
Product Details
- Vgs(th) (Max) @ Id
- 3.9V @ 100µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 2mOhm @ 50A, 10V
- Series
- HEXFET®
- Power Dissipation (Max)
- 3.3W (Ta), 136W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- PQFN (5x6)
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 117nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 40V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 5142pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 95A (Tc)
- Part Status
- Not For New Designs
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerTDFN