ON Semiconductor NVMFS6H848NWFT1G

Product Details

FET Type

N-Channel

Gate Charge (Qg) (Max) @ Vgs

56nC @ 10V

Packaging

Tape & Reel (TR)

Drain to Source Voltage (Vdss)

60V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4500pF @ 25V

Technology

MOSFET (Metal Oxide)

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

FET Feature

-

Drive Voltage (Max Rds On, Min Rds On)

10V

Part Status

Active

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id

4V @ 40µA

Operating Temperature

-55°C ~ 175°C (TJ)

Power Dissipation (Max)

79W (Tc)

Series

Automotive, AEC-Q101, OptiMOS™

Supplier Device Package

PG-TO263-3-2