ON Semiconductor NVMFS5C645NLAFT1G

Product Details

Vgs(th) (Max) @ Id

3.5V @ 200µA

Rds On (Max) @ Id, Vgs

600mOhm @ 2.4A, 10V

Power Dissipation (Max)

63W (Tc)

Series

CoolMOS™ E6

Supplier Device Package

TO-252

FET Type

N-Channel

Gate Charge (Qg) (Max) @ Vgs

20.5nC @ 10V

Packaging

Bulk

Drain to Source Voltage (Vdss)

600V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

440pF @ 100V

Technology

MOSFET (Metal Oxide)

Current - Continuous Drain (Id) @ 25°C

7.3A (Tc)

FET Feature

-

Drive Voltage (Max Rds On, Min Rds On)

10V

Part Status

Not For New Designs

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63