ON Semiconductor NVMFS5C628NLAFT1G

Product Details

FET Type

N-Channel

Supplier Device Package

PG-TO220-FP

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

17.2nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

600V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

373pF @ 100V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

5.7A (Tc)

Part Status

Not For New Designs

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Vgs(th) (Max) @ Id

3.5V @ 170µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

750mOhm @ 2A, 10V

Series

CoolMOS™

Power Dissipation (Max)

27W (Tc)