ON Semiconductor NVMFS5C410NAFT1G

Product Details

Rds On (Max) @ Id, Vgs

8mOhm @ 20A, 10V

Series

Automotive, AEC-Q101

Power Dissipation (Max)

210W (Tc)

FET Type

N-Channel

Supplier Device Package

TO-220AB

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

21nC @ 10V

Vgs (Max)

20V

Drain to Source Voltage (Vdss)

60V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

2596pF @ 30V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

130A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Package / Case

TO-220-3

Vgs(th) (Max) @ Id

4V @ 250µA

Operating Temperature

-55°C ~ 175°C (TJ)