ON Semiconductor NVD2955T4G

Product Details

Rds On (Max) @ Id, Vgs

14mOhm @ 10A, 10V

Series

TrenchFET®

Power Dissipation (Max)

2.5W (Ta), 5W (Tc)

FET Type

N-Channel

Gate Charge (Qg) (Max) @ Vgs

23nC @ 10V

Packaging

Digi-Reel®

Drain to Source Voltage (Vdss)

30V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

846pF @ 15V

Technology

MOSFET (Metal Oxide)

Current - Continuous Drain (Id) @ 25°C

14A (Tc)

FET Feature

-

Drive Voltage (Max Rds On, Min Rds On)

10V

Part Status

Active

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Vgs(th) (Max) @ Id

2.5V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)