ON Semiconductor NVATS4A102PZT4G

Product Details

Rds On (Max) @ Id, Vgs

34mOhm @ 10A, 10V

Series

-

Power Dissipation (Max)

2.1W (Ta), 23.5W (Tc)

FET Type

N-Channel

Supplier Device Package

TO-220-3F

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

100V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

870pF @ 50V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

5A (Ta), 17A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Vgs(th) (Max) @ Id

2.7V @ 250µA

Operating Temperature

-55°C ~ 175°C (TJ)